For VO2-based two-terminal devices, the first- order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to T-SPT approximate to 68 degrees C and becomes maximum at T-SPT. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the VO2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program. (c) 2007 American Institute of Physics.
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Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USAUniv Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
Cavalleri, A
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Dekorsy, T
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机构:Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
Dekorsy, T
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Chong, HHW
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Chong, HHW
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Kieffer, JC
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Kieffer, JC
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Schoenlein, RW
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Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USAUniv Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
Cavalleri, A
;
Dekorsy, T
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机构:Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
Dekorsy, T
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Chong, HHW
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机构:Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
Chong, HHW
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Kieffer, JC
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机构:Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
Kieffer, JC
;
Schoenlein, RW
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机构:Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA