Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

被引:214
作者
Kim, Bong-Jun [1 ]
Lee, Yong Wook
Chae, Byung-Gyu
Yun, Sun Jin
Oh, Soo-Young
Kim, Hyun-Tak
Lim, Yong-Sik
机构
[1] ETRI, IT Convergence & Components Lab, Taejon 305350, South Korea
[2] Konkuk Univ, Dept Appl Phys, Chungju 380701, South Korea
关键词
D O I
10.1063/1.2431456
中图分类号
O59 [应用物理学];
学科分类号
摘要
For VO2-based two-terminal devices, the first- order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to T-SPT approximate to 68 degrees C and becomes maximum at T-SPT. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the VO2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 23 条
[1]  
ANNETT JF, 2002, NATO SCI SERIES 2, V67, P137
[2]   The effect of electric field on metal-insulator phase transition in vanadium dioxide [J].
Boriskov, PP ;
Velichko, AA ;
Pergament, AL ;
Stefanovich, GB ;
Stefanovich, DG .
TECHNICAL PHYSICS LETTERS, 2002, 28 (05) :406-408
[3]   Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].
Cavalleri, A ;
Dekorsy, T ;
Chong, HHW ;
Kieffer, JC ;
Schoenlein, RW .
PHYSICAL REVIEW B, 2004, 70 (16) :1-4
[4]   Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition -: art. no. 237401 [J].
Cavalleri, A ;
Tóth, C ;
Siders, CW ;
Squier, JA ;
Ráksi, F ;
Forget, P ;
Kieffer, JC .
PHYSICAL REVIEW LETTERS, 2001, 87 (23) :237401-1
[5]   Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse [J].
Chae, BG ;
Kim, HT ;
Youn, DH ;
Kang, KY .
PHYSICA B-CONDENSED MATTER, 2005, 369 (1-4) :76-80
[6]   Highly oriented VO2 thin films prepared by sol-gel deposition [J].
Chae, BG ;
Kim, HT ;
Yun, SJ ;
Kim, BJ ;
Lee, YW ;
Youn, DH ;
Kang, KY .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (01) :C12-C14
[7]   Mid-infrared properties of a VO2 film near the metal-insulator transition [J].
Choi, HS ;
Ahn, JS ;
Jung, JH ;
Noh, TW ;
Kim, DH .
PHYSICAL REVIEW B, 1996, 54 (07) :4621-4628
[8]   EFFECTS OF VARIOUS DOPING ELEMENTS ON TRANSITION TEMPERATURE OF VANADIUM OXIDE SEMICONDUCTORS [J].
FUTAKI, H ;
AOKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) :1008-&
[9]   Orbital-assisted metal-insulator transition in VO2 -: art. no. 196404 [J].
Haverkort, MW ;
Hu, Z ;
Tanaka, A ;
Reichelt, W ;
Streltsov, SV ;
Korotin, MA ;
Anisimov, VI ;
Hsieh, HH ;
Lin, HJ ;
Chen, CT ;
Khomskii, DI ;
Tjeng, LH .
PHYSICAL REVIEW LETTERS, 2005, 95 (19)
[10]   Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices -: art. no. 242101 [J].
Kim, HT ;
Chae, BG ;
Youn, DH ;
Kim, G ;
Kang, KY ;
Lee, SJ ;
Kim, K ;
Lim, YS .
APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3