Phase-transition driven memristive system

被引：318

作者：

Driscoll, T. ^{[1
]}

Kim, H. -T. ^{[2
]}

Chae, B. -G. ^{[2
]}

Di Ventra, M. ^{[1
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] ETRI, MIT Device Team, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期

关键词：

metal-insulator transition; resistors; thin films; vanadium compounds; MOTT TRANSITION; MECHANISM; DEVICES; MEMORY; FILMS;

D O I：

10.1063/1.3187531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena.

引用

页数：3

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