Electrostatic modification of infrared response in gated structures based on VO2

被引：61

作者：

Qazilbash, M. M. ^{[1
]}

Li, Z. Q. ^{[1
]}

Podzorov, V. ^{[2
]}

Brehm, M. ^{[3
,4
]}

Keilmann, F. ^{[3
,4
]}

Chae, B. G. ^{[5
]}

Kim, H. T. ^{[5
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[3] Max Planck Inst Biochem, Abt Mol Strukturbiol, D-82152 Munich, Germany

[4] Ctr NanoSci, D-82152 Munich, Germany

[5] ETRI, IT Convergence & Components Lab, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2939434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage. (C) 2008 American Institute of Physics.

引用

页数：3

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