First-principles prediction of a new class of ferromagnetic semiconductors

被引:34
作者
Zhao, YJ [1 ]
Freeman, AJ [1 ]
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
ferromagnetism; semiconductors; chalcopyrites; theoretical calculations;
D O I
10.1016/S0304-8853(02)00042-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferromagnetism in I-III-VI2 chalcopyrite semiconductors is predicted to arise from holes provided by Mn doping in the illustrative case of CuGaSe2. The first-principles calculations within the generalized gradient approximation to density functional theory demonstrate that Mn substitutes for Ga sites in CuGaSe2 with a formation energy that is similar to0.25 eV lower than that for Cu sites. Ferromagnetic CuGa1-xMnxSe2 is found to be a half-metallic material with a magnetic moment of 4 mu(B) per Mn for xgreater than or equal to0.25, and its estimated Curie temperature is more than 110 K. We suggest that higher Curie temperatures may be achieved for this new class of ferromagnetic semiconductors based on Mn-doped I-III-VI2 chalcopyrites by employing other materials with a smaller lattice constant such as CuGaSe2 and CuAlSe2. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:145 / 150
页数:6
相关论文
共 24 条
[11]   QUASISPIN MODEL OF ITINERANT MAGNETISM - HIGH-TEMPERATURE THEORY [J].
LIU, SH .
PHYSICAL REVIEW B, 1977, 15 (09) :4281-4287
[12]   Room temperature ferromagnetism in novel diluted magnetic semiconductor Cd1-xMnxGeP2 [J].
Medvedkin, GA ;
Ishibashi, T ;
Nishi, T ;
Hayata, K ;
Hasegawa, Y ;
Sato, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10A) :L949-L951
[13]   BAND THEORY OF THE MAGNETIC INTERACTION IN MNO, MNS, AND NIO [J].
OGUCHI, T ;
TERAKURA, K ;
WILLIAMS, AR .
PHYSICAL REVIEW B, 1983, 28 (11) :6443-6452
[14]   (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].
Ohno, H ;
Shen, A ;
Matsukura, F ;
Oiwa, A ;
Endo, A ;
Katsumoto, S ;
Iye, Y .
APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365
[15]   Making nonmagnetic semiconductors ferromagnetic [J].
Ohno, H .
SCIENCE, 1998, 281 (5379) :951-956
[16]   Electric-field control of ferromagnetism [J].
Ohno, H ;
Chiba, D ;
Matsukura, F ;
Omiya, T ;
Abe, E ;
Dietl, T ;
Ohno, Y ;
Ohtani, K .
NATURE, 2000, 408 (6815) :944-946
[17]   Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].
Ohno, Y ;
Young, DK ;
Beschoten, B ;
Matsukura, F ;
Ohno, H ;
Awschalom, DD .
NATURE, 1999, 402 (6763) :790-792
[18]  
Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865
[19]  
TIEP HT, 1989, PHYS REV B, V40, P7019
[20]   MAGNETIC-BEHAVIOR OF THE DILUTED MAGNETIC SEMICONDUCTOR ZN1-XMNXSE [J].
TWARDOWSKI, A ;
SWAGTEN, HJM ;
DEJONGE, WJM ;
DEMIANIUK, M .
PHYSICAL REVIEW B, 1987, 36 (13) :7013-7023