Electrodeposition of epitaxial CdSe on (111) gallium arsenide

被引：21

作者：

Cachet, H

Cortès, R

Froment, M

Etcheberry, A

机构：

[1] Univ Paris 06, CNRS, Unite Propre 15, F-75252 Paris 05, France

[2] Univ Versailles, CNRS, UMR C0173, Inst Lavoisier IREM, F-78035 Versailles, France

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

electrodeposition; epitaxial growth; structure; interfacial chemistry; stoichiometry;

D O I：

10.1016/S0040-6090(99)00773-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：84 / 87

页数：4

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