EPITAXIAL ELECTRODEPOSITION OF CDTE-FILMS ON INP FROM AQUEOUS-SOLUTIONS - ROLE OF A CHEMICALLY DEPOSITED CDS INTERMEDIATE LAYER

被引：49

作者：

LINCOT, D ^{[1
]}

KAMPMANN, A ^{[1
]}

MOKILI, B ^{[1
]}

VEDEL, J ^{[1
]}

CORTES, R ^{[1
]}

FROMENT, M ^{[1
]}

机构：

[1] UNIV PARIS 06,CNRS,UPR 15,F-75252 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial (111) CdTe films have been grown on ((1) over bar (1) over bar (1) over bar) InP single crystals by one step electrodeposition in aqueous acidic solution, at a temperature of 85 degrees C, and a growth rate of about 0.7 mu m h(-1). Reflexion high-energy electron diffraction and five-circle x-ray diffraction techniques have been used to characterize the interface structure and epitaxial quality. The epitaxy of CdTe (fee a=6.49 Angstrom) takes place with a direct continuation of the InP lattice (fee a=5.87 Angstrom), with no rotation of the respective crystallographic directions. The epitaxy is markedly improved when the InP substrate is covered with a thin film (20-30 nm) of epitaxial CdS grown by chemical bath deposition which acts as an interfacial buffer layer. (C) 1995 American Institute of Physics.

引用

页码：2355 / 2357

页数：3

共 19 条

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