MONOCLINIC DEFORMATION AND TILTING OF EPITAXIAL CDTE-FILMS ON GAAS AT 25-400-DEGREES-C

被引：5

作者：

BICKMANN, K ^{[1
]}

HAUCK, J ^{[1
]}

MOCK, P ^{[1
]}

BERGER, H ^{[1
]}

机构：

[1] HUMBOLDT UNIV BERLIN, INST KRISTALLOG & MAT FORSCH, O-1040 BERLIN, GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 131卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90405-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Monocrystalline CdTe films of (111BAR) orientation were deposited on GaAs (001) with a vicinal angle of approximately 2-degrees. The orientation and monoclinic distortion of the films vary at 25-400-degrees-C because of the large differences in lattice constants and thermal expansion coefficients. X-ray diffraction measurements by the Bond method show a monoclinic distortion and a tilting with respect to the substrate by 1.33-degrees-1.44-degrees.

引用

页码：133 / 137

页数：5

共 12 条

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