Surface control of optical properties in silicon nanoclusters

被引:130
作者
Puzder, A [1 ]
Williamson, AJ [1 ]
Grossman, JC [1 ]
Galli, G [1 ]
机构
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
关键词
D O I
10.1063/1.1504707
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Density functional and quantum Monte Carlo calculations are employed to determine the effect of surface passivants on the optical gap of silicon nanoclusters. Our results show that quantum confinement is only one mechanism responsible for visible photoluminescence and that the specific surface chemistry must be taken into account in order to interpret experimental results. Significant changes occur in the optical gap of fully hydrogenated silicon nanoclusters when the surface contains passivants that change the bonding network at the surface. In the case of just one double-bonded oxygen atom, the gap reduction computed as a function of the nanocluster size demonstrates that one contaminant can greatly alter the optical gap. A further significant reduction of the gap occurs with multiple double-bonded oxygen contamination, providing a consistent interpretation of several recent experiments. We predict that other passivants that distort the tetrahedral bonding network at the surface, including other double-bonded groups and in some cases bridged oxygen, will also significantly affect the optical gap. Conversely, single-bonded passivants will have a minimal influence on the optical gap. A discussion of the difference in the strength of the optical transitions for clusters with different passivants is presented. (C) 2002 American Institute of Physics.
引用
收藏
页码:6721 / 6729
页数:9
相关论文
共 41 条
  • [21] WAVE-NUMBER-DEPENDENT DIELECTRIC FUNCTION OF SEMICONDUCTORS
    PENN, DR
    [J]. PHYSICAL REVIEW, 1962, 128 (05): : 2093 - +
  • [22] Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865
  • [23] ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SILICON CRYSTALLITES - APPLICATION TO POROUS SILICON
    PROOT, JP
    DELERUE, C
    ALLAN, G
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (16) : 1948 - 1950
  • [24] Surface chemistry of silicon nanoclusters
    Puzder, A
    Williamson, AJ
    Grossman, JC
    Galli, G
    [J]. PHYSICAL REVIEW LETTERS, 2002, 88 (09) : 4
  • [25] RATY JY, COMMUNICATION
  • [26] Excitonic effects and the optical absorption spectrum of hydrogenated Si clusters
    Rohlfing, M
    Louie, SG
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (15) : 3320 - 3323
  • [27] ROHLFING M, COMMUNICATION
  • [28] DIMENSIONS OF LUMINESCENT OXIDIZED AND POROUS SILICON STRUCTURES
    SCHUPPLER, S
    FRIEDMAN, SL
    MARCUS, MA
    ADLER, DL
    XIE, YH
    ROSS, FM
    HARRIS, TD
    BROWN, WL
    CHABAL, YJ
    BRUS, LE
    CITRIN, PH
    [J]. PHYSICAL REVIEW LETTERS, 1994, 72 (16) : 2648 - 2651
  • [29] Surface control of luminescence in silicon nanoparticles
    Seraphin, AA
    Ngiam, ST
    Kolenbrander, KD
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) : 6429 - 6433
  • [30] Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded in SiO2 matrices
    Takeoka, S
    Fujii, M
    Hayashi, S
    Yamamoto, K
    [J]. PHYSICAL REVIEW B, 1998, 58 (12): : 7921 - 7925