ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SILICON CRYSTALLITES - APPLICATION TO POROUS SILICON

被引：437

作者：

PROOT, JP

DELERUE, C

ALLAN, G

机构：

[1] Département d'Etudes des Surfaces et Interfaces, Institut Supérieur d'Electronique du Nord, 59046 Lille Cedex

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 16期

关键词：

D O I：

10.1063/1.108372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have calculated the electronic structure of spherical silicon crystallites containing up to 2058 Si atoms. We predict a variation of the optical band gap with respect to the size of the crystallites in very good agreement with available experimental results. We also calculate the electron-hole recombination time which is of the order of 10(-4)-10(-6) s for crystallites with diameters of 2.0-3.0 nm. We conclude that small silicon crystallites can have interesting optical properties in the visible range. These results are applied to porous silicon for which we confirm that a possible origin of the luminescence is the quantum confinement.

引用

页码：1948 / 1950

页数：3

共 23 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2] TRANSFERABLE NONORTHOGONAL TIGHT-BINDING PARAMETERS FOR SILICON [J].

ALLEN, PB ;

BROUGHTON, JQ ;

MCMAHAN, AK .

PHYSICAL REVIEW B, 1986, 34 (02) :859-862

[3] STUDIES OF COHERENT AND DIFFUSE-X-RAY SCATTERING BY POROUS SILICON [J].

BELLET, D ;

DOLINO, G ;

LIGEON, M ;

BLANC, P ;

KRISCH, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :145-149

[4] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].

BENISTY, H ;

SOTOMAYORTORRES, CM ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948

[5]

BSIESY A, UNPUB

[6] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[7] 1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD [J].

CANHAM, LT ;

BARRACLOUGH, KG ;

ROBBINS, DJ .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1509-1511

[8]

DEXTER DL, 1958, SOLID STATE PHYS, V6, P360

[9] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].

DIMARIA, DJ ;

KIRTLEY, JR ;

PAKULIS, EJ ;

DONG, DW ;

KUAN, TS ;

PESAVENTO, FL ;

THEIS, TN ;

CUTRO, JA ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416

[10] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J].

FURUKAWA, S ;

MIYASATO, T .

PHYSICAL REVIEW B, 1988, 38 (08) :5726-5729

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