TRANSFERABLE NONORTHOGONAL TIGHT-BINDING PARAMETERS FOR SILICON

被引：53

作者：

ALLEN, PB

BROUGHTON, JQ

MCMAHAN, AK

机构：

[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

[2] UNIV CALIF LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94550

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：859 / 862

页数：4

共 13 条

[1] SURFACE RECONSTRUCTION AND LATTICE-DYNAMICS OF HYDROGENATED SI(001)-2X1 [J].

ALLAN, DC ;

MELE, EJ .

PHYSICAL REVIEW B, 1985, 31 (08) :5565-5568

[2]

ANDERSEN OK, 1985, HIGHLIGHTS CONDENSED, P59

[3]

[Anonymous], ELECTRONIC STRUCTURE

[4]

BROUGHTON JQ, 1986, P MRS S COMPUTER BAS

[5] THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1984, 29 (02) :785-792

[6] ELECTRONIC-STRUCTURE OF SILICON [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1974, 10 (12) :5095-5107

[7]

COHEN ML, 1970, SOLID STATE PHYS, V24, P38

[8] LINEAR AUGMENTED SLATER-TYPE-ORBITAL METHOD FOR ELECTRONIC-STRUCTURE CALCULATIONS [J].

DAVENPORT, JW .

PHYSICAL REVIEW B, 1984, 29 (06) :2896-2904

[9] ELECTRONIC STACKING-FAULT STATES IN SILICON [J].

MATTHEISS, LF ;

PATEL, JR .

PHYSICAL REVIEW B, 1981, 23 (10) :5384-5396

[10] COMPARISON OF METHODS FOR THE CALCULATION OF PHASE-STABILITY IN SILICON [J].

MCMAHAN, AK ;

YIN, MT ;

COHEN, ML .

PHYSICAL REVIEW B, 1981, 24 (12) :7210-7216

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