Pseudo-real time observation of the dynamics of phase defect on Si(100) surface

The dynamics of a phase defect (P-defect) on the Si(100) surface was studied for the first time by scanning tunneling microscopy in pseudo-real time below 10K, using the repeated-line-scan technique in which single line scans are repeated on the same path along a dimer row. In addition to the pair creation and annihilation of the P-defect, the effect of a step on the motion of the P-defect was clearly demonstrated. Since the local barrier height for the migration of the P-defect depends on the local environment such as strain and electronic structure due to the existence of defects or dopants, the obtained results also indicate that analysis of the P-defect is promising for local probing of the Si(100) surface.