Complementary symmetry silicon nanowire logic: Power-efficient inverters with gain

被引:55
作者
Wang, Dunwei [1 ]
Sheriff, Bonnie A. [1 ]
Heath, James R. [1 ]
机构
[1] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA
关键词
field-effect transistors; nanotechnology; nanowires; semiconductors; silicon;
D O I
10.1002/smll.200600249
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The investigation and preparation of silicon nanowire (NW) and microwire n- and p-Field Effect Transistors (p-FETs) are described. The features of complementary NW devices including p-type Si / n-type Si or GaN hetero junctions for diode logic, are also reported. These logic gates are better than those structures based on pure p- or n-type technology. These systems are limited by both the stochastic chemical nature of the NW formation and doping. A suitable technique for combining both p- and n-type NWs within a single, ultra high-density, highly aligned NW array is presented. Four types of devices are characterized and compared namely NW p- and n-FETs and μW p- and n-FETs. A systematic study of the dopant concentrations are carried out for the fabrication of the NW. A complementary inverter involves a p-FTE and n-FET in series with a shared contact as output. The surface sensitivity of Si NW FETs is used to develop ultra high density Si NW arrays.
引用
收藏
页码:1153 / 1158
页数:6
相关论文
共 27 条
[1]   Benchmarking nanotechnology for high-performance and low-power logic transistor applications [J].
Chau, R ;
Datta, S ;
Doczy, M ;
Doyle, B ;
Jin, J ;
Kavalieros, J ;
Majumdar, A ;
Metz, M ;
Radosavljevic, M .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (02) :153-158
[2]   Nanoscale molecular-switch crossbar circuits [J].
Chen, Y ;
Jung, GY ;
Ohlberg, DAA ;
Li, XM ;
Stewart, DR ;
Jeppesen, JO ;
Nielsen, KA ;
Stoddart, JF ;
Williams, RS .
NANOTECHNOLOGY, 2003, 14 (04) :462-468
[3]   An integrated logic circuit assembled on a single carbon nanotube [J].
Chen, ZH ;
Appenzeller, J ;
Lin, YM ;
Sippel-Oakley, J ;
Rinzler, AG ;
Tang, JY ;
Wind, SJ ;
Solomon, PM ;
Avouris, P .
SCIENCE, 2006, 311 (5768) :1735-1735
[4]   General observation of n-type field-effect behaviour in organic semiconductors [J].
Chua, LL ;
Zaumseil, J ;
Chang, JF ;
Ou, ECW ;
Ho, PKH ;
Sirringhaus, H ;
Friend, RH .
NATURE, 2005, 434 (7030) :194-199
[5]   Silicon nanowire devices [J].
Chung, SW ;
Yu, JY ;
Heath, JR .
APPLIED PHYSICS LETTERS, 2000, 76 (15) :2068-2070
[6]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853
[7]   High performance silicon nanowire field effect transistors [J].
Cui, Y ;
Zhong, ZH ;
Wang, DL ;
Wang, WU ;
Lieber, CM .
NANO LETTERS, 2003, 3 (02) :149-152
[8]   Doping and electrical transport in silicon nanowires [J].
Cui, Y ;
Duan, XF ;
Hu, JT ;
Lieber, CM .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (22) :5213-5216
[9]   High-speed integrated nanowire circuits [J].
Friedman, RS ;
McAlpine, MC ;
Ricketts, DS ;
Ham, D ;
Lieber, CM .
NATURE, 2005, 434 (7037) :1085-1085
[10]   Silicon vertically integrated nanowire field effect transistors [J].
Goldberger, Josh ;
Hochbaum, Allon I. ;
Fan, Rong ;
Yang, Peidong .
NANO LETTERS, 2006, 6 (05) :973-977