Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors

被引：97

作者：

Ouyang, Yijian ^{[1
]}

Yoon, Youngki ^{[1
]}

Fodor, James K. ^{[1
]}

Guo, Jing ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

D O I：

10.1063/1.2387876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon-based nanostructures promise near ballistic transport and are being intensively explored for device applications. In this letter, the performance limits of carbon nanoribbon (CNR) field-effect transistors (FETs) and carbon nanotube (CNT) FETs are compared. The ballistic channel conductance and the quantum capacitance of the CNRFET are about a factor of 2 smaller than those of the CNTFET because of the different valley degeneracy factors for CNRs and CNTs. The intrinsic speed of the CNRFET is faster due to a larger average carrier injection velocity. The gate capacitance plays an important role in determining which transistor delivers a larger on current. (c) 2006 American Institute of Physics.

引用

页数：3

共 16 条

[1] Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors [J].

Appenzeller, J ;

Knoch, J ;

Radosavljevic, M ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 92 (22) :226802-1

[2] Carbon nanotube electronics [J].

Avouris, P ;

Appenzeller, J ;

Martel, R ;

Wind, SJ .

PROCEEDINGS OF THE IEEE, 2003, 91 (11) :1772-1784

[3] Self-aligned carbon nanotube transistors with charge transfer doping [J].

Chen, J ;

Klinke, C ;

Afzali, A ;

Avouris, P .

APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3

[4]

Guo J, 2004, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, P703

[5] Performance projections for ballistic carbon nanotube field-effect transistors [J].

Guo, J ;

Lundstrom, M ;

Datta, S .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3192-3194

[6] Carbon nanotube field-effect transistors with integrated ohmic contacts and high-k gate dielectrics [J].

Javey, A ;

Guo, J ;

Farmer, DB ;

Wang, Q ;

Wang, DW ;

Gordon, RG ;

Lundstrom, M ;

Dai, HJ .

NANO LETTERS, 2004, 4 (03) :447-450

[7] QUANTUM CAPACITANCE DEVICES [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1988, 52 (06) :501-503

[8] Single-walled carbon nanotube electronics [J].

McEuen, PL ;

Fuhrer, MS ;

Park, HK .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (01) :78-85

[9] Edge state in graphene ribbons: Nanometer size effect and edge shape dependence [J].

Nakada, K ;

Fujita, M ;

Dresselhaus, G ;

Dresselhaus, MS .

PHYSICAL REVIEW B, 1996, 54 (24) :17954-17961

[10] BALLISTIC METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

NATORI, K .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) :4879-4890

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