Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors

被引：70

作者：

Appenzeller, J ^{[1
]}

Knoch, J

Radosavljevic, M

Avouris, P

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.92.226802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a detailed study on the impact of multimode transport in carbon nanotube field-effect transistors. Under certain field conditions electrical characteristics of tube devices are a result of the contributions of more than one one-dimensional subband. Through potassium doping of the nanotube the impact of the different bands is made visible. We discuss the importance of scattering for a stepwise change of current as a function of gate voltage and explain the implications of our observations for the performance of nanotube transistors.

引用

页码：226802 / 1

页数：4

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