Nano-indentation of copper thin films on silicon substrates

被引：292

作者：

Suresh, S ^{[1
]}

Nieh, TG

Choi, BW

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

SCRIPTA MATERIALIA | 1999年 / 41卷 / 09期

关键词：

mechanical properties; nano-indentation; thin films; copper; dislocations;

D O I：

10.1016/S1359-6462(99)00245-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nano-indentation experiments were conducted on polycrystalline thin films of copper, 300, 600 or 1000 nm in thickness, on silicon substrates. The load-displacement curves exhibited periodic bursts in indentor penetration depth.

引用

页码：951 / 957

页数：7

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