MECHANICAL-PROPERTIES AND MICROSTRUCTURAL CHARACTERIZATION OF AL-0.5-PERCENT CU THIN-FILMS

被引:88
作者
VENKATRAMAN, R [1 ]
BRAVMAN, JC [1 ]
NIX, WD [1 ]
DAVIES, PW [1 ]
FLINN, PA [1 ]
FRASER, DB [1 ]
机构
[1] INTEL CORP,SANTA CLARA,CA 95052
关键词
TEM; STRESS; GRAIN GROWTH; AL; DISLOCATIONS; CUAL2;
D O I
10.1007/BF02673337
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using a wafer curvature technique we have studied the variation of stress with temperature in Al-0.5%Cu thin films deposited on oxidized silicon wafers. Concurrently, the microstructural changes in the films induced by the thermal cycling inherent to this technique were studied with in-situ transmission electron microscopy heating experiments. On heating an as-sputtered film a stress drop occurs, corresponding to the onset of grain growth. The in-situ TEM experiments indicate that the extent of grain growth is significantly altered by the presence of compressive stresses in film. During cooling, dislocation loops nucleate on {111} planes inclined to the film surface, although the grains size plays an important role in determine the extent to which this mechanism can account for the deformation. A native oxide can influence the stress levels in the film by pinning one end of the dislocation loops. Upon cooling below 200-degrees-C a rapid increase in stress occurs. Although this increase has been attributed to hardening due to the precipitation of excess copper, no evidence of precipitate-dislocation interactions were observed.
引用
收藏
页码:1231 / 1237
页数:7
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