Interaction of Sn atoms with the intrinsic dangling-bond states of Si(111)-(7x7)

被引：34

作者：

Lin, XF

Chizhov, I

Mai, HA

Willis, RF

机构：

[1] Department of Physics, Pennsylvania State University, University Park

来源：

SURFACE SCIENCE | 1996年 / 366卷 / 01期

关键词：

adatoms; chemisorption; growth; metal-semiconductor interfaces; scanning tunneling microscopy; scanning tunneling spectroscopy; silicon; surface chemical reaction; surface relaxation and reconstruction; surface structure; tin;

D O I：

10.1016/0039-6028(96)00799-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

At the initial stages of room-temperature deposition we have observed the preferential adsorption of the individual Sn atoms on the Si center-adatom (T-1) sites on Si(111)-(7 x 7) using scanning tunneling microscopy. A spectroscopic analysis of changes in the energy spectrum of surface states around the Fermi level (E(f)) suggests that covalent bonding occurs between individual Sn and Si adatoms. This results in a surface metal-insulator transition due to the removal of Si adatom surface states at E(f) while preserving the (7 x 7) sub-lattice. An energy-level scheme is proposed to explain this behavior.

引用

页码：51 / 59

页数：9

共 34 条

[1]

[Anonymous], 1989, METALLIZATION METAL

[2] SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (3 X-1) RECONSTRUCTION INDUCED BY LI ADSORPTION ON THE SI(111) SURFACE [J].