EFFECT OF SURFACE RECONSTRUCTION ON FERMI-LEVEL PINNING IN THE SN ON SI(111) SYSTEM

被引：14

作者：

GRIFFITHS, CL

ANYELE, HT

MATTHAI, CC

CAFOLLA, AA

WILLIAMS, RH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed detailed photoemission studies on the Si(111)(square-root 3 x square-root 3)R30-degrees-Sn and Si(111)(2 square-root 3 X 2 square-root 3)R30-degrees-Sn reconstructed surfaces. Band bending is observed in both cases resulting in n-type Schottky barrier heights of (0.66 +/- 0.09) and (0.99 +/- 0.10) eV, respectively. In parallel, theoretical calculations using the self-consistent tight binding method in the extended Huckel approximation have been performed to determine the electronic structure and barrier heights at these reconstructed surfaces. The difference in barrier heights is found to be in excellent agreement with experiment.

引用

收藏

页码：1559 / 1563

页数：5

相关论文

共 29 条

[1]

ANYELE HT, 1992, 8TH P INT C SOL SURF

[2] ATOMIC ORIGINS OF SURFACE CORE LEVELS ON SI(111)-(7X7) STUDIED BY SITE-DEPENDENT GE SUBSTITUTION [J].

CARLISLE, JA ;

MILLER, T ;

CHIANG, TC .

PHYSICAL REVIEW B, 1992, 45 (07) :3811-3814

[3] PHOTOEMISSION-STUDY OF THE GROWTH, DESORPTION, SCHOTTKY-BARRIER FORMATION, AND ATOMIC-STRUCTURE OF PB ON SI(111) [J].

CARLISLE, JA ;

MILLER, T ;

CHIANG, TC .

PHYSICAL REVIEW B, 1992, 45 (07) :3400-3409

[4]

CHIANG TC, 1990, PHYS REV B, V42, P9245

[5] THE STRUCTURE OF THE SI(111)(SQUARE-ROOT3XSQUARE-ROOT3)R30-DEGREES-SN SURFACE DETERMINED USING X-RAY-DIFFRACTION [J].

CONWAY, KM ;

MACDONALD, JE ;

NORRIS, C ;

VLIEG, E ;

VANDERVEEN, JF .

SURFACE SCIENCE, 1989, 215 (03) :555-565

[6] STRUCTURAL AND ELECTRONIC-PROPERTIES OF EPITAXIAL THIN-LAYER SIN GEN SUPERLATTICES [J].

FROYEN, S ;

WOOD, DM ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 37 (12) :6893-6907

[7] GROWTH AND MORPHOLOGY OF PB ON SI(111) [J].

GANZ, E ;

HWANG, IS ;

XIONG, FL ;

THEISS, SK ;

GOLOVCHENKO, J .

SURFACE SCIENCE, 1991, 257 (1-3) :259-273

[8] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES [J].

HIMPSEL, FJ ;

HOLLINGER, G ;

POLLAK, RA .

PHYSICAL REVIEW B, 1983, 28 (12) :7014-7018

[9] STRUCTURAL STUDY OF ULTRATHIN SN LAYERS DEPOSITED ONTO GE(111) AND SI(111) SURFACES BY RHEED [J].

ICHIKAWA, T .

SURFACE SCIENCE, 1984, 140 (01) :37-63

[10] EMPTY-ELECTRONIC AND FILLED-ELECTRONIC STATES OF THE SI(111)-SQUARE-ROOT-3 X SQUARE-ROOT-3-SN, SQUARE-ROOT-3 X SQUARE-ROOT-3-IN AND 2-SQUARE-ROOT-3 X 2-SQUARE-ROOT-3-SN SURFACES [J].

KINOSHITA, T ;

OHTA, H ;

ENTA, Y ;

YAEGASHI, Y ;

SUZUKI, S ;

KONO, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1987, 56 (11) :4015-4021