Selective Etching of Silicon from Ti3SiC2 (MAX) To Obtain 2D Titanium Carbide (MXene)

被引：439

作者：

Alhabeb, Mohamed ^{[1
,2
]}

Maleski, Kathleen ^{[1
,2
]}

Mathis, Tyler S. ^{[1
,2
]}

Sarycheva, Asia ^{[1
,2
]}

Hatter, Christine B. ^{[1
,2
]}

Uzun, Simge ^{[1
,2
]}

Levitt, Ariana ^{[1
,2
]}

Gogotsi, Yury ^{[1
,2
]}

机构：

[1] Drexel Univ, AJ Drexel Nanomat Inst, 3141 Chestnut St, Philadelphia, PA 19104 USA

[2] Drexel Univ, Dept Mat Sci & Engn, 3141 Chestnut St, Philadelphia, PA 19104 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2018年 / 57卷 / 19期

关键词：

delamination; energy-storage materials; MXenes; silicon; two-dimensional materials; TI3C2TX MXENE; SURFACE INVESTIGATIONS; CORROSION BEHAVIOR; RAMAN-SCATTERING; REACTIVITY; NANOSHEETS; PHASES; INTERCALATION; SPECTROSCOPY; DELAMINATION;

D O I：

10.1002/anie.201802232

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Until now, MXenes could only be produced from MAX phases containing aluminum, such as Ti3AlC2. Here, we report on the synthesis of Ti3C2 (MXene) through selective etching of silicon from titanium silicon carbidethe most common MAX phase. Liters of colloidal solutions of delaminated Ti3SiC2-derived MXene (0.5-1.3mgmL(-1)) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti3AlC2. This new synthesis method greatly widens the range of precursors for MXene synthesis.

引用

页码：5444 / 5448

页数：5

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