Preparation of high Ga-content CuInGaSe2 films by selenization of metal precursors using diethylselenide as a less-hazardous source

被引：7

作者：

Kinoshita, Atsuki ^{[1
]}

Fukaya, Masahiro ^{[1
]}

Nakanishi, Hisayuki ^{[1
]}

Sugiyama, Mutsumi ^{[1
]}

Chichibu, Shigefusa F. ^{[2
]}

机构：

[1] Tokyo Univ Sci, Dept Elect Engn, 2641 Yamazaki, Noda, Chiba 2788510, Japan

[2] Univ Tsukuba, Inst Appl Phys, Grad Sch Appl Sci & Pure, Tsukuba, Ibaraki 3058573, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期

关键词：

D O I：

10.1002/pssc.200669645

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A metalorganic selenide, diethylselenide [(C2H5)(2)Se: DESe], was used as a less-hazardous selenization source for the preparation of CuInGaSe2 alloy films for solar cell application. Purely single-phase, polycrystalline films of CuInGaSe2 were formed without additional annealing process. Photoluminescence spectra of the films at low temperature were dominated by three donor-acceptor pair emissions peculiar to the films used for a photo-absorbing layer of state-of-the-art CuInGaSe2-based solar cells. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2539 / +

页数：2

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