Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers

被引：34

作者：

Shimura, Yosuke ^{[1
]}

Tsutsui, Norimasa ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Sakai, Akira ^{[2
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

BAND-GAP; SI;

D O I：

10.1143/JJAP.48.04C130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the relationship between Sri precipitation and strain relaxation in Ge1-xSnx buffer layers grown by the compositionally step-graded (CSG) method on a virtual Ge substrate. We found that the strain in the upper Ge1-xSnx layers is reduced by Sri precipitation rather than the lateral propagation of misfit dislocations at the interfaces of upper Ge1-xSnx layers in the CSG method. The critical misfit strain was increased to 5.8 x 10(-3) compared with that in our previous work by lowering the temperature of the postdeposition annealing, and a Sri content of 6.3% in the Ge1-xSnx buffer layer was achieved with a large degree of strain relaxation using only two stacked layers of the CSG structure. An in-plane tensile strain of 0.62% in a 30-nm-thick Ge layer fabricated on these Ge1-xSnx buffer layers was achieved. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

共 12 条

[1] Ge-Sn semiconductors for band-gap and lattice engineering [J].