Structural and compositional study of B-C-N films produced by laser ablation of B4C targets in N2 atmosphere

被引:52
作者
Laidani, N
Anderle, M
Canteri, R
Elia, L
Luches, A
Martino, M
Micheli, V
Speranza, G
机构
[1] ITC, Ist Ric Sci & Tecn, Div Fis Chim Superfici Interfacce, I-38050 Trent, Italy
[2] Ist Nazl Fis Mat, I-73100 Lecce, Italy
[3] Univ Lecce, Dipartimento Fis, I-73100 Lecce, Italy
关键词
boron carbon nitride; laser ablation; thin films; structure;
D O I
10.1016/S0169-4332(99)00559-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, we report on a structural and compositional characterization of B-C-N thin films deposited by laser reactive ablation of a B4C target, in low-pressure (5 Pa) nitrogen atmosphere. For target ablation, a KrF excimer laser (lambda = 248 nm, tau = 20 ns) has been used, at the fluences of 6 and 12 J/cm(2). Films have been deposited on silicon (100) substrates at room temperature. Scanning electron miroscopy (SEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), time-of-night secondary ion mass spectrometry (ToF-SIMS), and Fourier transform-infrared spectroscopy (FT-IR) characterization techniques were used to analyze the composition and the structure of the deposited films. The film results to be a mixture of sp(2)/sp(3) BN and sp(2)/sp(3) nitrogenated C phases. The concentration of the different BN phases depends on the used laser fluence for the deposition of the film. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:135 / 144
页数:10
相关论文
共 32 条
[1]  
ACQUIAVIVA S, IN PRESS APPL PHYS A
[2]   VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J].
ALBEN, R ;
WEAIRE, D ;
SMITH, JE ;
BRODSKY, MH .
PHYSICAL REVIEW B, 1975, 11 (06) :2271-2296
[3]   Infra-red emission characterization of polycrystalline diamond films [J].
Ayres, VM ;
McCormick, T ;
Alexander, WB ;
Vestyck, DJ ;
Butler, JE ;
Spiberg, P .
DIAMOND AND RELATED MATERIALS, 1998, 7 (06) :789-793
[4]  
BENNINGHOVEN A, 1993, ANAL CHEM, V65, P630
[5]   FORMATION OF C-N THIN-FILMS BY ION-BEAM DEPOSITION [J].
BOYD, KJ ;
MARTON, D ;
TODOROV, SS ;
ALBAYATI, AH ;
KULIK, J ;
ZUHR, RA ;
RABALAIS, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (04) :2110-2122
[6]  
Briggs D., 1983, PRACTICAL SURFACE AN, P87
[7]  
BRIGGS D, 1983, PRACTICAL SURFACE AN, P359
[8]  
COLTHUP NB, 1969, INTRO INFRA RED RAMA
[9]  
DAVIS LE, 1978, HDB AUGER ELECT SPEC
[10]   NORMAL MODES IN HEXAGONAL BORON NITRIDE [J].
GEICK, R ;
PERRY, CH ;
RUPPRECH.G .
PHYSICAL REVIEW, 1966, 146 (02) :543-&