Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr

The electrical and optical properties of undoped n-AIGaN films with Al mole fraction close to x = 0.4 were studied before and after implantation of 3 X 1016 cm(-2) 250-keV Mn, Co, and Cr ions. The electrical properties of the virgin samples are shown to be dominated by deep donors with the level near E-c-0.25 eV and concentration of about 2 X 10(18) cm(-3). The microcathodoluminescence (MCL) spectra of the virgin samples were dominated by two strong defect bands at 2.5 eV and 3.7 eV After implantation, the resistivity of the implanted films increased but could not be accurately measured because of the shunting influence of the unimplanted portions of the films. Their resistivity was increased by more than an order of magnitude compared to the virgin samples because of the compensation by defects coming from the implanted layer during the post-implantation annealing. The absorption and luminescence spectra of the implanted samples were dominated by two strong bands near 2 eV and 3.5 eV. The latter are attributed to the electron transitions from the Mn, Co, or Cr acceptors to the conduction band.