Magnetic and optical properties of GaMnN grown by ammonia-source molecular-beam epitaxy

被引：32

作者：

Hashimoto, M ^{[1
]}

Zhou, YK ^{[1
]}

Tampo, H ^{[1
]}

Kanamura, M ^{[1
]}

Asahi, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 04期

关键词：

molecular beam epitaxy; nitrides; magnetic materials; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(03)00946-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Diluted magnetic semiconductor GaMnN layers were grown on sapphire substrates by ammonia-source molecular-beam epitaxy. Phase-separation in a sample with large Mn content was confirmed by X-ray diffraction and Raman scattering measurements. Two distinct regions were observed in the magnetization versus temperature curves for both phase-separated and non-phase-separated samples. The samples exhibited ferromagnetic characteristics at high temperatures and paramagnetic characteristics at low temperatures, while the phase-separated sample showed the strongest ferromagnetic character. It is considered that the non-phase-separated GaMnN is primarily paramagnetic and that the phase-separated GaMnN is dominated by the ferromagnetism of Mn-based compounds at above 50 K. Strong photoluminescence emission peaking at 3.35 eV was observed in the non-phase-separated samples, attributable to hand-to-band-like transition in GaMnN. The results will enable us to fabricate novel devices with magnetic and light-emitting functions. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：499 / 504

页数：6

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