Vertically aligned carbon nanotube heterojunctions

被引:32
作者
Cassell, AM [1 ]
Li, J [1 ]
Stevens, RMD [1 ]
Koehne, JE [1 ]
Delzeit, L [1 ]
Ng, HT [1 ]
Ye, Q [1 ]
Han, J [1 ]
Meyyappan, M [1 ]
机构
[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA
基金
美国国家航空航天局;
关键词
D O I
10.1063/1.1794356
中图分类号
O59 [应用物理学];
学科分类号
摘要
The bottom-up fabrication and electrical properties of end-to-end contacted multiwalled carbon nanotube (MWCNT) heterojunctions are reported. The vertically aligned MWCNT heterojunction arrays are formed via successive plasma-enhanced chemical vapor deposition processing to achieve the layered junction architecture. Electron microscopy and current-sensing atomic force microscopy are used to reveal the physical nature of the junctions. Symmetric, nonlinear I-V curves of the as-fabricated junctions indicate that a tunnel barrier is formed between the end-to-end contacted MWCNTs. Repeated high bias I-V scans of many devices connected in parallel fuses the heterojunctions, as manifested by a shift to linear I-V characteristics.
引用
收藏
页码:2364 / 2366
页数:3
相关论文
共 19 条
  • [1] Contact resistance between carbon nanotubes
    Buldum, A
    Lu, JP
    [J]. PHYSICAL REVIEW B, 2001, 63 (16)
  • [2] Combinatorial chips for optimizing the growth and integration of carbon nanofibre based devices
    Cassell, AM
    Ye, Q
    Cruden, BA
    Li, J
    Sarrazin, PC
    Ng, HT
    Han, J
    Meyyappan, M
    [J]. NANOTECHNOLOGY, 2004, 15 (01) : 9 - 15
  • [3] Reactor design considerations in the hot filament/direct current plasma synthesis of carbon nanofibers
    Cruden, BA
    Cassell, AM
    Ye, Q
    Meyyappan, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 4070 - 4078
  • [4] Growth of multiwall carbon nanotubes in an inductively coupled plasma reactor
    Delzeit, L
    McAninch, I
    Cruden, BA
    Hash, D
    Chen, B
    Han, J
    Meyyappan, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) : 6027 - 6033
  • [5] Microfabricated field emission devices using carbon nanofibers as cathode elements
    Guillorn, MA
    Melechko, AV
    Merkulov, VI
    Ellis, ED
    Simpson, ML
    Baylor, LR
    Bordonaro, GJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2598 - 2601
  • [6] Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires
    Hu, JT
    Ouyang, M
    Yang, PD
    Lieber, CM
    [J]. NATURE, 1999, 399 (6731) : 48 - 51
  • [7] Temperature dependence of the current-voltage characteristics of a carbon-nanotube heterojunction
    Kim, J
    Lee, JO
    Oh, H
    Yoo, KH
    Kim, JJ
    [J]. PHYSICAL REVIEW B, 2001, 64 (16):
  • [8] Carbon nanotubes in interconnect applications
    Kreupl, F
    Graham, AP
    Duesberg, GS
    Steinhögl, W
    Liebau, M
    Unger, E
    Hönlein, W
    [J]. MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) : 399 - 408
  • [9] Carbon nanotube nanoelectrode array for ultrasensitive DNA detection
    Li, J
    Ng, HT
    Cassell, A
    Fan, W
    Chen, H
    Ye, Q
    Koehne, J
    Han, J
    Meyyappan, M
    [J]. NANO LETTERS, 2003, 3 (05) : 597 - 602
  • [10] Bottom-up approach for carbon nanotube interconnects
    Li, J
    Ye, Q
    Cassell, A
    Ng, HT
    Stevens, R
    Han, J
    Meyyappan, M
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (15) : 2491 - 2493