HfO2 films with high laser damage threshold

被引：88

作者：

Alvisi, M

Di Giulio, M

Marrone, SG

Perrone, MR ^{[1
]}

Protopapa, ML

Valentini, A

Vasanelli, L

机构：

[1] Univ Lecce, Dipartimento Fis, INFM, I-73100 Lecce, Italy

[2] Univ Lecce, Dipartimento Sci Mat, INFM, I-73100 Lecce, Italy

[3] Univ Bari, INFM, Dipartimento Interateneo Fis, I-70126 Bari, Italy

来源：

THIN SOLID FILMS | 2000年 / 358卷 / 1-2期

关键词：

HfO2 thin films; laser damage; photoacoustic deflection;

D O I：

10.1016/S0040-6090(99)00690-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Laser damage resistance studies have been performed at 308 nm (XeCl laser) by the photoacoustic beam deflection technique, on hafnium dioxide (HfO2) thin films deposited on fused silica substrates either by the ion-assisted electron beam evaporation technique or by a dual-ion-beam sputtering technique. Films of quite high laser damage threshold (7 J/cm(2)) have been deposited by the electron beam evaporation technique. The optical and structural film characteristics and their relation to damage threshold have also been investigated. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：250 / 258

页数：9

共 22 条

[1] Deposition of SiO2 films with high laser damage thresholds by ion-assisted electron-beam evaporation [J].