High-field transport studies of GaN

被引：36

作者：

Barker, JM

Akis, R

Ferry, DK

Goodnick, SM

Thornton, TJ

Koleske, DD

Wickenden, AE

Henry, RL

机构：

[1] Arizona State Univ, Dept Elect Engn, Ctr Solid State Elect Res, ERC 227, Tempe, AZ 85287 USA

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期

关键词：

GaN; high-field transport; velocity-field characteristic; drift velocity;

D O I：

10.1016/S0921-4526(01)01453-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A pulsed voltage input and a four-point measurement were used to determine the room temperature velocity-field characteristic of bulk gallium nitride test structures with an etched constriction. A peak electron velocity of approximately 2.5 x 10(7) cm/s was attained at a field of 180 kV/cm. which corresponds closely to theoretical predictions. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：39 / 41

页数：3

共 5 条

[1] MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].