Room-temperature continuous-wave laser operation of electrically-pumped 1.55μm V(E)under-barCSEL

被引：32

作者：

El Kurdi, M

Bouchoule, S

Bousseksou, A

Sagnes, I

Plais, A

Strassner, M

Symonds, C

Garnache, A

Jacquet, J

机构：

[1] CNRS, Lab Photon & Nanostruct, UPR 020, LPN, F-91460 Marcoussis, France

[2] Alcatel Res & Innovat, F-91460 Marcoussis, France

[3] Univ Montpellier 2, CNRS, Ctr Elect & Microoptoelect Montpellier, UMR 5507, F-34095 Montpellier 05, France

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 11期

关键词：

D O I：

10.1049/el:20040445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is presented on room-temperature (RT) continuous-wave (CW) laser emission at 1.55 mum of an all InP-based electrically-pumped vertical external-cavity surface-emitting laser (EP-VECSEL). Threshold currents of 1.4 kA/cm(2) and Output powers of up to 0.3 mW were measured under CW operation at RT. A maximum output power of 2.7 mW has been obtained in quasi-CW operation at a heatsink temperature of 10.5degreesC. This first result demonstrates that EPVECSELs are a potential candidate for the realisation of compact vertical-cavity emitting sources.

引用

页码：671 / 672

页数：2

共 7 条

[1]

BOUCHOULE S, 2004, SPIE PHOT EUR C STRA

[2] Low threshold, room temperature laser diode pumped Sb-based V(E)under-bar-CSEL emitting around 2.1 μm [J].