Atomic layer deposition of lanthanum oxide films for high-κ gate dielectrics

被引：73

作者：

He, WM ^{[1
]}

Schuetz, S

Solanki, R

Belot, J

McAndrew, J

机构：

[1] Oregon Hlth & Sci Univ, OGI Sch Sci & Engn, Beaverton, OR 97006 USA

[2] Univ Nebraska, Dept Chem, Lincoln, NE 68588 USA

[3] Amer Air Liquide, Countryside, IL 60525 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 07期

关键词：

D O I：

10.1149/1.1724824

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Lanthanum-containing oxide films are emerging candidates for gate-oxide films, due to expected high dielectric constants as well as promising crystal and electronic band structure. We have used tris(bistrimethylsilylamido)-lanthanum La[N(SiMe3)(2)](3) to achieve atomic layer deposition of La2O3 on a (100) Si wafer. Crystalline and electrical properties of the resulting films have been characterized. Dielectric constant values in the range of 20-23, and a dielectric breakdown field of about 4.2 MV/cm were observed. The electrical properties of our structures remain consistent even after prolonged ambient exposure. (C) 2004 The Electrochemical Society.

引用

页码：G131 / G133

页数：3

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