The size effect of Ba0.6Sr0.4TiO3 thin films on the ferroelectric properties

被引:62
作者
Chen, Hongwei [1 ]
Yang, Chuanren [1 ]
Fu, Chunlin [1 ]
Zhao, Li [1 ]
Gao, Zhiqiang [1 ]
机构
[1] Univ Elect Sci & Technol China, Inst Microelect & Solid State Elect, Chengdu 610054, Peoples R China
关键词
barium strontium titanate; thin film; ferroelectric property; grain size; film thickness;
D O I
10.1016/j.apsusc.2005.06.027
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Barium strontium titanate (BST) thin films were prepared by RF magnetron sputtering. The dielectric constant-voltage curves and the hysteresis loops of BST thin films with different grain sizes and film thicknesses were investigated. When the grain size increases from 12 nm to 35 nm, remarkable increases in dielectric constant and tunability were observed. Above 12 nm, the BST films exhibited size effects, i.e. a decrease in maximal polarization (P.) and an increase in coercive electric field (E-c) with reduction in grain size. In our investigation, the dielectric constant, tunability and maximal polarization increased as the film thickness increased. Furthermore, the size dependence of the dielectric constant and tunability of Ba0.6Sr0.4TiO3 thin films is determined by that of the maximal polarization and the coercive electric field. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:4171 / 4177
页数:7
相关论文
共 22 条
[1]   Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters [J].
Carlson, CM ;
Rivkin, TV ;
Parilla, PA ;
Perkins, JD ;
Ginley, DS ;
Kozyrev, AB ;
Oshadchy, VN ;
Pavlov, AS .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1920-1922
[2]   Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters [J].
Chen, CL ;
Shen, J ;
Chen, SY ;
Luo, GP ;
Chu, CW ;
Miranda, FA ;
Van Keuls, FW ;
Jiang, JC ;
Meletis, EI ;
Chang, HY .
APPLIED PHYSICS LETTERS, 2001, 78 (05) :652-654
[3]   Structural and electrical properties of Ba0.5Sr0.5TiO3 films on Ir and IrO2 electrodes [J].
Cho, HJ ;
Kang, CS ;
Hwang, CS ;
Kim, JW ;
Horii, H ;
Lee, BT ;
Lee, SI ;
Lee, MY .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (7A) :L874-L876
[4]  
Ding Y. P., 1998, P 1 CHIN INT C HIGH, P489
[5]   Nanoferroelectric domains in ultrathin BaTiO3 films [J].
Drezner, Y ;
Berger, S .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) :6774-6778
[6]   XRD study of the grain growth in CdTe films annealed at different temperatures [J].
Enríquez, JP ;
Mathew, X .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 81 (03) :363-369
[7]  
Fujisawa H., 1998, ISAF 1998. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics (Cat. No.98CH36245), P77, DOI 10.1109/ISAF.1998.786640
[8]   Improvement in electrical characteristics of graded manganese doped barium strontium titanate thin films [J].
Jain, M ;
Majumder, SB ;
Katiyar, RS ;
Miranda, FA ;
Van Keuls, FW .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1911-1913
[9]   Nanomeasurement and fractal analysis of PZT ferroelectric thin films by atomic force microscopy [J].
Jeng, YR ;
Tsai, PC ;
Fang, TH .
MICROELECTRONIC ENGINEERING, 2003, 65 (04) :406-415
[10]   Structural characteristics of SrTiO3 thin films processed by rapid thermal annealing [J].
Jiang, SW ;
Zhang, QY ;
Li, YR ;
Zhang, Y ;
Sun, XF ;
Jiang, B .
JOURNAL OF CRYSTAL GROWTH, 2005, 274 (3-4) :500-505