The electron-phonon scattering rate of zinc blende GaN

被引：4

作者：

Akis, R ^{[1
]}

Dür, M ^{[1
]}

Goodnick, SM ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期

关键词：

GaN; high-field transport; electron-phonon interaction;

D O I：

10.1016/S0921-4526(01)01365-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have performed calculations of the electron-phonon scattering rate of zinc blende GaN using the rigid psuedo-ion model. We find that the calculated rates are relatively insensitive to assumptions made regarding the underlying band structure and phonon dispersion and, to a very good approximation, follow the electronic density of states. The latter result allows an optical deformation scattering constant to be fitted. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：42 / 46

页数：5

共 9 条

[1] POLARIZED RAMAN-SPECTRA IN GAN [J].

AZUHATA, T ;

SOTA, T ;

SUZUKI, K ;

NAKAMURA, S .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (10) :L129-L133

[2]

Cohen M. L., 1988, Electronic Structure and Optical Properties of Semiconductors

[3] First principles modeling of high field transport in wide-band-gap materials [J].

Dür, M ;

Goodnick, SM ;

Redmer, R ;

Reigrotzki, M ;

Fitzer, N ;

Städele, M .

PHYSICA B, 1999, 272 (1-4) :295-298

[4]

Fischetti M.V., 1991, MONTE CARLO DEVICE S, P123

[5] Ab initio study of structural, dielectric, and dynamical properties of GaN [J].

Karch, K ;

Wagner, JM ;

Bechstedt, F .

PHYSICAL REVIEW B, 1998, 57 (12) :7043-7049

[6] LATTICE-DYNAMICS OF ZINCBLENDE STRUCTURE COMPOUNDS .2. SHELL-MODEL [J].

KUNC, K ;

NIELSEN, OH .

COMPUTER PHYSICS COMMUNICATIONS, 1979, 17 (04) :413-422

[7] Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure [J].

Oguzman, IH ;

Kolnik, J ;

Brennan, KF ;

Wang, RP ;

Fang, TN ;

Ruden, PP .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) :4429-4436

[8] Energy bands and acceptor binding energies of GaN [J].

Xia, JB ;

Cheah, KW ;

Wang, XL ;

Sun, DZ ;

Kong, MY .

PHYSICAL REVIEW B, 1999, 59 (15) :10119-10124

[9] Lattice dynamics of zinc-blende GaN and AlN .1. Bulk phonons [J].

Zi, J ;

Wan, X ;

Wei, GH ;

Zhang, KM ;

Xie, XD .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (35) :6323-6328

← 1 →