Electrical spin injection into In0.4Ga0.6As/GaAs quantum dots using (Ga,Mn)As

被引：5

作者：

Ghosh, S ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.1456521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical injection of spin polarized holes from a Ga0.974Mn0.026As layer into In0.4Ga0.6As/GaAs quantum dots is achieved for temperatures up to 40 K. The spin injection efficiency at 4.5 K is similar to 26%. The temperature behavior of spin injection agrees with the measured temperature dependence of the magnetization in the (Ga,Mn)As layer. Control samples with Be doped GaAs contact layers do not exhibit similar polarization behavior. (C) 2002 American Vacuum Society.

引用

页码：1182 / 1184

页数：3

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