Exciton fine structure splitting of Single InGaAs self-assembled quantum dots

被引:10
作者
Högele, A
Alèn, B
Bickel, F
Warburton, RJ
Petroff, PM
Karrai, K
机构
[1] Univ Munich, Ctr NanoSci, D-80539 Munich, Germany
[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[3] Univ Valencia, Inst Ciencia Mat, Dept Fis Aplicada, E-46071 Valencia, Spain
[4] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
quantum dots; homogeneous linewidth; fine structure splitting; absorption;
D O I
10.1016/j.physe.2003.11.007
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We show how the resonant absorption of the ground state neutral exciton confined in a single InGaAs self-assembled quantum dot can be directly observed in an optical transmission experiment. A spectrum of the differential transmitted intensity is obtained by sweeping the exciton energy into resonance with laser photons exploiting the voltage induced Stark-shift. We describe the details of this experimental technique and some example results which exploit the similar to1 mueV spectral resolution. In addition to the fine structure splitting of the neutral exciton and an upper bound on the homogeneous linewidth at 4.2 K, we also determine the transition electric dipole moment. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 179
页数:5
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