Imaging highly confined modes in sub-micron scale silicon waveguides using Transmission-based Near-field Scanning Optical Microscopy

被引：45

作者：

Robinson, Jacob T. ^{[1
]}

Preble, Stefan F. ^{[1
]}

Lipson, Michal ^{[1
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

OPTICS EXPRESS | 2006年 / 14卷 / 22期

关键词：

D O I：

10.1364/OE.14.010588

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a new technique for high resolution imaging of near field profiles in highly confining photonic structures. This technique, Transmission-based Near-field Scanning Optical Microscopy (TraNSOM), measures changes in transmission through a waveguide resulting from near field perturbation by a scanning metallic probe. Using this technique we compare different mode polarizations and measure a transverse optical decay length of lambda/15 in sub-micron Silicon On Insulator (SOI) waveguides. These measurements compare well to theoretical results. (c) 2006 Optical Society of America.

引用

页码：10588 / 10595

页数：8

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