Fabrication of single-crystal silicon field emitter array on glass substrate

被引：3

作者：

Higa, K

Asano, T

机构：

[1] Oshima Natl Coll Maritime Technol, Yamaguchi 7422193, Japan

[2] Kyushu Inst Technol, Ctr Microelect Syst, Iizuka, Fukuoka 8208502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 6B期

关键词：

silicon field emitter; field emission; anodization; porous silicon; anodic bonding;

D O I：

10.1143/JJAP.41.4307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication process of a single-crystal silicon field emitter array on a glass substrate has been investigated. Single-crystal silicon emitter tips are prepared by anodization of a silicon wafer having an n/p junction. Emitter tips are transferred to the glass substrate by anodic bonding. The anodic bonding is carried out at temperatures lower than 300degreesC. The conditions of the fabrication process and the field emission characteristics are reported. It is shown that the temperature of the emitter tips rises to the melting point of silicon by Joule heating. This phenomenon is shown to be peculiar to the emitter tips on a glass substrate which has a low thermal conductivity. The influence of Joule heating at the emitter tip, during electron emission, on the emission characteristics is also reported.

引用

页码：4307 / 4310

页数：4

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