High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator

被引：10

作者：

DeMelo, CB ^{[1
]}

Hall, DC

Snider, GL

Xu, D

Kramer, G

El-Zein, N

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Motorola Inc, Phys Sci Res Labs, Tempe, AZ 85284 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 01期

关键词：

D O I：

10.1049/el:20000026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs-based high electron mobility metal-oxide-semiconductor field effect transistor (MOSFET) is fabricated using wet thermal oxidation of AlAs. Enhanced transport properties and interface smoothness result from use of a pseudomorphic In0.2Ga0.8As channel layer, yielding a high transconductance of 50 mS/mm (5 mu m gate length).

引用

页码：84 / 86

页数：3

共 6 条

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