An InAlAs/InGaAs metal-oxide-semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer

We report the growth, fabrication, and electrical characterization of InAlAs/InGaAs n-type depletion-mode, metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing the thermally formed native oxide of InAlAs as a gate insulating layer. The native oxide of InAlAs, consisting mostly of aluminum-oxygen complexes, is formed in an elevated temperature environment with water vapor as the oxidizing species. This native oxidation process is similar to that used to oxidize other aluminum-containing compounds in the GaAs-based material system, such as AlGaAs and InAlP. The InGaAs MOSFETs having a gate length similar to 8 mu m exhibit a maximum g(m) similar to 6 mS/mm. (C) 1996 American Institute of Physics.