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Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

被引：140
作者：
Adelmann, C
Simon, J
Feuillet, G
Pelekanos, NT
Daudin, B
Fishman, G
机构：
[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee SPMM, F-38054 Grenoble 9, France
[2] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR C5588, F-38042 Grenoble, France
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期
关键词：
D O I：
10.1063/1.126098
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, following a Stranski-Krastanow growth mode. Atomic force microscopy revealed that their dimensions were small enough to expect zero-dimensional quantum effects: the islands were typically 27 nm wide and 2.9 nm high. Strong blue-violet photoluminescence of the dots is observed, persisting up to room temperature. The temperature dependence of the photoluminescence is analyzed and compared to that of InGaN quantum well and bulk samples. (C) 2000 American Institute of Physics. [S0003-6951(00)00212-6].
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页码：1570 / 1572
页数：3
相关论文
共 20 条
[1]   Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations [J].
Adelmann, C ;
Langer, R ;
Feuillet, G ;
Daudin, B .
APPLIED PHYSICS LETTERS, 1999, 75 (22) :3518-3520
[2]   Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN [J].
Daudin, B ;
Widmann, F ;
Feuillet, G ;
Samson, Y ;
Arlery, M ;
Rouviere, JL .
PHYSICAL REVIEW B, 1997, 56 (12) :R7069-R7072
[3]   Temperature effects on the radiative recombination in self-assembled quantum dots [J].
Fafard, S ;
Raymond, S ;
Wang, G ;
Leon, R ;
Leonard, D ;
Charbonneau, S ;
Merz, JL ;
Petroff, PM ;
Bowers, JE .
SURFACE SCIENCE, 1996, 361 (1-3) :778-782
[4]   Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].
Gil, B ;
Briot, O ;
Aulombard, RL .
PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031
[5]   Real time control of InxGa1-xN molecular beam epitaxy growth [J].
Grandjean, N ;
Massies, J .
APPLIED PHYSICS LETTERS, 1998, 72 (09) :1078-1080
[6]   Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces [J].
Hirayama, H ;
Tanaka, S ;
Ramvall, P ;
Aoyagi, Y .
APPLIED PHYSICS LETTERS, 1998, 72 (14) :1736-1738
[7]  
HIRAYAMA H, 1999, MRS INTERNET J NITRI
[8]  
HO I, 1996, APPL PHYS LETT, V69, P1701
[9]  
Martin G, 1996, APPL PHYS LETT, V68, P2541, DOI 10.1063/1.116177
[10]   Large band gap bowing of InxGa1-xN alloys [J].
McCluskey, MD ;
Van de Walle, CG ;
Master, CP ;
Romano, LT ;
Johnson, NM .
APPLIED PHYSICS LETTERS, 1998, 72 (21) :2725-2726
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