Focused ion beams techniques for nanomaterials characterization

被引:99
作者
Langford, Richard M. [1 ]
机构
[1] Trinity Coll Dublin, Dept Phys, Dublin, Ireland
关键词
focused ion beam system; TEM sample preparation; dual platform system;
D O I
10.1002/jemt.20324
中图分类号
R602 [外科病理学、解剖学]; R32 [人体形态学];
学科分类号
100101 ;
摘要
Focused ion beam and dual platform systems have, over the last 10 years, become a main stay of sample preparation for material analysis. In this article the merits of using these systems are discussed and the three main techniques used to prepare cross-section specimens for transmission electron microscopy (TEM) are both discussed and compared with emphasis being placed on the tricks that users do to make the lamellae as thin as possible and with a minimum of damage at their sidewalls. Other techniques such as serial slicing for three-dimensional reconstruction and the preparation of plan-view specimens are also summarized.
引用
收藏
页码:538 / 549
页数:12
相关论文
共 84 条
[1]  
ALANI R, 2000, P EUR 12 BRNO CZECH, P563
[2]  
[Anonymous], 1999, P P 25 INT S TEST FA
[3]   Electromigration damage in mechanically deformed Al onductor lines: Dislocations as fast diffusion paths [J].
Baker, SP ;
Joo, YC ;
Knauss, MP ;
Arzt, E .
ACTA MATERIALIA, 2000, 48 (09) :2199-2208
[4]  
BARNA A, 2004, P 13 EUR MICR C, P779
[5]  
BASILE DP, 1992, MATER RES SOC SYMP P, V254, P23
[6]   Focused ion beam induced surface amorphization and sputter processes [J].
Basnar, B ;
Lugstein, A ;
Wanzenboeck, H ;
Langfischer, H ;
Bertagnolli, E ;
Gornik, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03) :927-930
[7]  
Bender H, 1999, INST PHYS CONF SER, P593
[8]  
Bender H, 1997, INST PHYS CONF SER, P465
[9]   Simulation of topography evolution and damage formation during TEM sample preparation using focused ion beams [J].
Boxleitner, W ;
Hobler, G ;
Klüppel, V ;
Cerva, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 :102-107
[10]   Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy [J].
Brezna, W ;
Wanzenböck, H ;
Lugstein, A ;
Bertagnolli, E ;
Gornik, E ;
Smoliner, J .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (04) :195-198