High power mid-infrared interband cascade lasers based on type-II quantum wells

被引:98
作者
Yang, RQ [1 ]
Yang, BH [1 ]
Zhang, D [1 ]
Lin, CH [1 ]
Murry, SJ [1 ]
Wu, H [1 ]
Pei, SS [1 ]
机构
[1] QET INC,HOUSTON,TX 77204
关键词
D O I
10.1063/1.120076
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a high power mid-infrared interband cascade laser operating at temperatures up to 170 K. The threshold current densities of this laser are considerably lower than the previously reported values in cascade lasers. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 23 periods of active regions separated by digitally graded multilayer injection regions. A peak optical output power of similar to 0.5 W/facet and a slope of 211 mW/A per facet, corresponding to a differential external quantum efficiency of 131%, are observed at 80 K and at a wavelength of similar to 3.9 mu m. (C) 1997 American Institute of Physics. [S0003-6951 (97)00443-9].
引用
收藏
页码:2409 / 2411
页数:3
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