Room-temperature low-threshold type-II quantum-well lasers at 4.5 mu m

被引：18

作者：

Lin, CH

Yang, RQ

Murry, SJ

Pei, SS

Yan, C

McDaniel, DL

Falcon, M

机构：

[1] BOEING DEF & SPACE GRP,ROCKETDYNE TECH SERV,KIRTLAND AFB,NM 87185

[2] USAF,PHILLIPS LAB,SEMICOND LASER BRANCH,KIRTLAND AFB,NM 87117

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 12期

基金：

美国国家航空航天局;

关键词：

aluminum materials/devices; continuous-wave (CW) lasers; epitaxial growth; gallium materials/devices; quantum-well lasers; semiconductor lasers;

D O I：

10.1109/68.643265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report optically pumped InAs-InGaSb-InAs-AlSb type-II quantum-well lasers at 3.83-4.48 mu m. Lasing was observed at temperatures up to 300 K with a characteristic temperature T-0 of 61.6 K. The average absorbed threshold power was only 0.7 mW at 220 K, and 2.7 mW at 300 K with a pulselength of 650 ns and a repetition rate of 2 kHz. At 49 K, the continuous-wave (CW) output power was 4.2 mW/facet with an absorbed threshold pump power of 31.5 mW and an absorbed pump power of 62 mW, indicating a differential quantum efficiency of 54% for two facets.

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收藏

页码：1573 / 1575

页数：3

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