Dependence of wavelength control on dielectric structure for vertical-cavity surface-emitting lasers

被引：3

作者：

Huffaker, DL

机构：

[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas at Austin, Austin

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 03期

关键词：

D O I：

10.1063/1.363893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calculated data are presented that compare the control of the lasing wavelength for different dielectric vertical-cavity surface-emitting lasers that use a GaAs tuning layer of variable thickness to control the longitudinal cavity resonance. The advantages of high-contrast Bragg reflectors and a half-wave cavity spacer thickness become obvious in achieving both a wide tuning range and minimizing reflectivity changes. (C) 1997 American Institute of Physics.

引用

页码：1598 / 1600

页数：3

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