Nonuniform silicon oxidation and application for the fabrication of aperture for near-field scanning optical microscopy

In this letter, a technological approach for the fabrication of a miniature aperture for near-field scanning optical microscopy using silicon micromachining technology is described. The aperture with diameter sizes from 10 to 500 nm at the apex of a SiO2 tip on a Si cantilever is fabricated using a "Low temperature Oxidation & Selective Etching" technique. The SiO2 tip is formed by nonuniform Si wet oxidation at 950 degrees C with a thickness of about 1 mu m. The aperture is created by selective etching SiO2 in a buffered-HF (50% HF:40% NH4F, 9cc:100cc) solution at 36 degrees C using a thin chromium (Cr) layer deposited on the oxidized sample as a mask. Using the fabricated probe, atomic force microscopy and corresponding near-field scanning optical microscopy images of 300 nm diameter latex spheres on mica substrate are obtained. (C) 1999 American Institute of Physics. [S0003-6951(99)05248-1].