MOSFET scalability limits and "new frontier" devices

被引：38

作者：

Antoniadis, DA ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.

引用

页码：2 / 5

页数：4