Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

被引：146

作者：

Chang, Wen-Yuan ^{[1
]}

Cheng, Kai-Jung ^{[1
]}

Tsai, Jui-Ming ^{[1
]}

Chen, Hung-Jen ^{[1
]}

Chen, Frederick ^{[2
]}

Tsai, Ming-Jinn ^{[2
]}

Wu, Tai-Bor ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期

关键词：

electrical conductivity transitions; electrical resistivity; MIM devices; nanofabrication; nanostructured materials; platinum; random-access storage; thin film capacitors; titanium compounds; MEMORY DEVICES; NIO FILMS;

D O I：

10.1063/1.3193656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated TiO2 thin films with embedded Pt nanocrystals (Pt-NCs) and investigated the resistive switching characteristics for nonvolatile memory application. Reversible and steady bistable resistance switching behavior was observed for the Pt/TiO2/Pt capacitors with Pt-NCs embedded in the TiO2 films. Moreover, an improvement in the stability of resistance switching and retention properties was also achieved from the embedding of uniform and fine Pt-NCs.

引用

页数：3

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