Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

被引：32

作者：

Jain, F. C. ^{[1
]}

Suarez, E. ^{[1
]}

Gogna, M. ^{[1
]}

Alamoody, F. ^{[1
]}

Butkiewicus, D. ^{[1
]}

Hohner, R. ^{[1
]}

Liaskas, T. ^{[1
]}

Karmakar, S. ^{[1
]}

Chan, P. -Y. ^{[1
]}

Miller, B. ^{[1
]}

Chandy, J. ^{[1
]}

Heller, E. ^{[1
,2
]}

机构：

[1] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA

[2] RSoft Design Inc, Ossining, NY USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 08期

关键词：

II-VI gate FET; quantum dot gate FET; nonvolatile memory; three-state FET; ZnMgS gate insulator FET;

D O I：

10.1007/s11664-009-0755-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high-k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO (x) -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO (x) -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

引用

页码：1574 / 1578

页数：5

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