Microstructural and compositional characterization of a new silicon carbide nanocables using scanning transmission electron microscopy

被引:11
作者
Yu, DP [1 ]
Xing, YJ
Tence, M
Pan, HY
Leprince-Wang, Y
机构
[1] Peking Univ, Dept Phys, Mesoscop Phys Natl Lab, Beijing 100871, Peoples R China
[2] Peking Univ, Electron Microscopy Lab, Beijing 100871, Peoples R China
[3] Univ Marne la Vallee, Lab Phys Mat Divises & Interfaces, F-77454 Marne La Vallee 2, France
[4] Univ Paris 11, Phys Solides Lab, F-1405 Orsay, France
基金
中国国家自然科学基金;
关键词
TEM; EELS; nanostructures; nanocables;
D O I
10.1016/S1386-9477(02)00444-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Composite nanocables with peculiar structure were synthesized using a solid-liquid-solid mechanism. Each of the nanocables consists of a crystalline core sheathed with an amorphous layer (40 nm in average diameter). The crystalline core of the nanocables is so fine (1-6 nm in diameter), that it is nearly impossible to characterize them using other methods. Fortunately, the powerful high resolution electron energy loss spectroscopy (EELS) technique (with minimum beam size < 1 nm) allowed us to analyze this peculiar nanomaterial. The fine crystalline core was proved to be a hexagonal silicon carbide, while the sheathing layer was silicon oxide. High angle dark field technique was employed to map the nanocable structures. Our results show that the EELS is powerful in nanometric regime characterization, while the SiC nanocables reported here may be useful in future nanotechnology. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 12 条
[1]   New trends in STEM-based nano-EELS analysis [J].
Colliex, C .
JOURNAL OF ELECTRON MICROSCOPY, 1996, 45 (01) :44-50
[2]  
Egerton R. F, 1996, ELECT ENERGY LOSS SP
[3]  
GNOEVAYA N, 1965, SPIS BULG GEOL DRUZH, V26, P89
[4]  
HAN WQ, 1997, SCIENCE, V277, P1278
[5]   HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].
IIJIMA, S .
NATURE, 1991, 354 (6348) :56-58
[6]   Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach [J].
Kong, YC ;
Yu, DP ;
Zhang, B ;
Fang, W ;
Feng, SQ .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :407-409
[7]   A laser ablation method for the synthesis of crystalline semiconductor nanowires [J].
Morales, AM ;
Lieber, CM .
SCIENCE, 1998, 279 (5348) :208-211
[8]   Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide [J].
Wu, XC ;
Song, WH ;
Zhao, B ;
Huang, WD ;
Pu, MH ;
Sun, YP ;
Du, JJ .
SOLID STATE COMMUNICATIONS, 2000, 115 (12) :683-686
[9]   Nanoscale silicon wires synthesized using simple physical evaporation [J].
Yu, DP ;
Bai, ZG ;
Ding, Y ;
Hang, QL ;
Zhang, HZ ;
Wang, JJ ;
Zou, YH ;
Qian, W ;
Xiong, GC ;
Zhou, HT ;
Feng, SQ .
APPLIED PHYSICS LETTERS, 1998, 72 (26) :3458-3460
[10]   Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature [J].
Yu, DP ;
Lee, CS ;
Bello, I ;
Sun, XS ;
Tang, YH ;
Zhou, GW ;
Bai, ZG ;
Zhang, Z ;
Feng, SQ .
SOLID STATE COMMUNICATIONS, 1998, 105 (06) :403-407