Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off

被引:10
作者
Basco, R [1 ]
Prabhu, A [1 ]
Yngvesson, KS [1 ]
Lau, KM [1 ]
机构
[1] UNIV MASSACHUSETTS,DEPT ELECT & COMP ENGN,AMHERST,MA 01003
基金
美国国家航空航天局;
关键词
D O I
10.1109/16.554785
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we report the integration of an AlGaAs/GaAs two-dimensional electron gas (2-DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off (ELO) technique. The 1 mu m thick high-mobility 2-DEG device transplanted on quartz showed no sign of degradation resulting from the ELO process. The 2-DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. We obtained a minimum intrinsic conversion loss of 17 dB at 94 GHz at liquid nitrogen temperature. The measured IF bandwidth of the mixer was greater than 3 GHz.
引用
收藏
页码:11 / 16
页数:6
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