Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

被引：27

作者：

Chen, Charlene ^{[1
]}

Abe, Katsumi ^{[2
]}

Fung, Tze-Ching ^{[1
]}

Kumomi, Hideya ^{[2
]}

Kanicki, Jerzy ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Organ & Mol Elect Lab, Ann Arbor, MI 48109 USA

[2] Canon Inc, Canon Res Ctr, Ohta Ku, Tokyo 1468501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 03期

关键词：

SILICON;

D O I：

10.1143/JJAP.48.03B025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OILED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (Delta V-T) within acceptable operating error range. (c) 2009 The Japan Society of Applied Physics

引用

页数：7

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