Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs

被引：52

作者：

Matsudaira, H ^{[1
]}

Miyamoto, S

Ishizaka, H

Umezawa, H

Kawarada, H

机构：

[1] Waseda Univ, Sch Sci & Engn, Tokyo 1698555, Japan

[2] CREST, Japan Sci & Technol Corp, Tokyo 1020081, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 07期

关键词：

cutoff frequency; diamond; hydrogen-terminated (H-terminated) surface; metal-insulator-semiconductor field-effect transistors (MISFETs); saturation velocity; submicrometer;

D O I：

10.1109/LED.2004.831200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submicrometer-gate (0.2-0.5-mum) diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-mum-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 x 10(6) cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.

引用

页码：480 / 482

页数：3

共 10 条

[1] THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].